收藏本站
Preliminary Technical Information
Polar TM Power MOSFET
HiPerFET TM
N-Channel Enhancement Mode
Avalanche Rated
IXFB170N30P
V DSS
I D25
R DS(on)
t rr
=
=
≤
≤
300V
170A
18 m Ω
200 ns
Fast Intrinsic Diode
PLUS264 TM (IXFB)
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
300
300
V
V
V GSS
V GSM
Continuous
Transient
± 20
± 30
V
V
G
D
S
(TAB)
I D25
I LRMS
I DM
I A
E AS
T C = 25 ° C
Leads Current Limit, RMS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
170
75
500
85
5
A
A
A
A
J
G = Gate
S = Source
D = Drain
TAB = Drain
dV/dt
P D
T J
T JM
T stg
T L
T SOLD
F C
Weight
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting force
20
1250
-55 ... +150
150
-55 ... +150
300
260
30..120/6.7..27
10
V/ns
W
° C
° C
° C
° C
° C
N/lb.
g
Features
? Fast intrinsic diode
? Avalanche Rated
? Unclamped Inductive Switching (UIS)
rated
? Very low R th results high power
dissipation
? Low R DS(ON) and Q G
? Low package inductance
Advantages
? Low gate charge results in simple
drive requirement
? Improved Gate, Avalanche and
dynamic dv/dt ruggedness
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
? High power density
Applications
BV DSS
V GS(th)
I GSS
I DSS
V GS = 0V, I D = 3mA
V DS = V GS , I D = 1mA
V GS = ± 20V, V DS = 0V
V DS = V DSS
V GS = 0V
T J = 125 ° C
300
2.5
4.5
± 200
25
1.5
V
V
nA
μ A
mA
? DC-DC coverters
? Battery chargers
? Switched-mode and resonant-mode
power supplies
? DC choppers
? AC and DC motor control
? Uninterrupted power supplies
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
18
m Ω
? High speed power switching
applications
? 2008 IXYS CORPORATION, All rights reserved
DS100000(06/08)
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IXFB210N20P MOSFET N-CH 200V 210A PLUS264
IXFB30N120P MOSFET N-CH 1200V 30A PLUS264
IXFB38N100Q2 MOSFET N-CH 1000V 38A PLUS264
IXFB40N110P MOSFET N-CH 1100V 40A PLUS264
IXFB44N100P MOSFET N-CH 1000V 44A PLUS264
IXFB44N100Q3 MOSFET N-CH 1000V 44A PLUS264
IXFB50N80Q2 MOSFET N-CH 800V 50A PLUS264
IXFB52N90P MOSFET N-CH TO-264
相关代理商/技术参数
IXFB210N20P 功能描述:MOSFET 210 Amps 200V 0.0105 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFB210N30P3 功能描述:MOSFET N-Channel: Power MOSFET w/Fast Diode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFB300N10P 功能描述:MOSFET POLAR PWR MOSFET 100V, 300A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFB30N120P 功能描述:MOSFET 30 Amps 1200V 0.35 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFB30N120Q2 功能描述:MOSFET 30 Amps 1200V 0.38 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFB38N100Q2 功能描述:MOSFET 38 Amps 1000V 0.25 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFB38N100Q2_08 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFET Q2-Class
IXFB40N110P 功能描述:MOSFET 40 Amps 1100V 0.2600 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube